Standard

IEC 63229:2021 ED1

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Astratto

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

Specifiche dei prodotti

  • Standard da IEC
  • Pubblicato:
  • Edizione: 1
  • Tipo di documento: IS
  • Pagine
  • Publisher IEC
  • Distributor IEC
  • ICS 31.080.99
  • International TC TC 47