Standard

SAE 2008-01-2883

Nov 2008 Current

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Abstract

Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature SiC devices for high power/temperature switching. High-voltage VJFETs are typically designed normally-on to ensure voltage control operation at high current-gain. However, to exploit the high voltage/temperature capabilities of VJFETs in a normally-off high-current voltage-controlled switch, high-voltage normally-on and low-voltage normally-off VJFETs were connected in the cascode configuration. In this paper, we review the high temperature DC characteristics of VJFETs and 1200 V normally-off cascode switches. The measured parameter shifts in the 25°C to 300°C temperature range are in excellent agreement with theory, confirming fabrication of robust SiC VJFETs and cascode switches.

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Standard from SAE International
Published: November 11 2008
Document type: IS
Pages
ISBN:

Publisher: SAE International
Distributor: SAE International

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Abstract

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